20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 STGW20NB60H n-channel20a-600v to-247 powermesh? igbt type STGW20NB60H vces 600v vce(tat) < 2.8 v ic 20 a high input impedance (voltage driven) low on-voltage drop (vcesal) low gate charge high current capability very high frequency operation off losses include tail current to-247 applications . high frequency motor controls . welding equipments . smps and pfc in both hard switch and resonant topologies internal schematic diagram c (2) g (1) absolute maximum ratings (?) pulse width limited by safe operating area symbol vces vecr vge ic ic icm(') plot tstg tj parameter collector-emitter voltage (vos = 0) emitter-collector voltage gate-emitter voltage collector current (continuous) at tc = 25 c collector current (continuous) at tc = 100 c collector current (pulsed) total dissipation at t0 = 25 c derating factor storage temperature max. operating junction temperature value 600 20 20 40 20 160 150 1.2 -65 to 150 150 unit v v v a a a w w/c c c nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
STGW20NB60H thermal data rthj-case rthj-amb rthc-h thermal thermal thermal resistance resistance resistance junction-case junction-ambient case-heatsink max max typ 0.83 30 0.1 c/w oc/w c/w electrical characteristics (tj = 25 c unless otherwise specified) off symbol vbr(ces) ices iges parameter collector-emitter breakdown voltage collector cut-off (voe = 0) gate-emitter leakage current (vce = 0) test conditions ic = 250 na vge = 0 vce = max rating tj = 25 c vce = max rating tj=125c vge = 20 v vce = 0 min. 600 typ. max. 10 100 100 unit v ha ha na on(*) symbol voe(lh) vce(sat) parameter gate threshold voltage collector-emitter saturation voltage test conditions vce = vge ic = 250 ^a vge = 15v ic = 20a vge = 15v lc = 20a tj = 125c min. 3 typ. 2.3 1.9 max. 5 2.8 unit v v v dynamic symbol gtt cies goes cres qg qge qgc icl parameter forward transconductance input capacitance output capacitance reverse transfer capacitance total gate charge gate-emitter charge gate-collector charge latching current test conditions vce =25 v lc = 20 a vce = 25 v f = 1 mhz vge = 0 vce = 480v lc = 20a vge=15v vciamp = 480 v rg=10ii tj = 1 50 c min. 7.0 1200 140 28 80 typ. 10 1700 200 40 110 13 51 max. 2200 260 52 145 unit s pf pf pf nc nc nc a switching on symbol td(on) tr (di/dt)on eon parameter delay time rise time turn-on current slope turn-on switching losses test conditions vcc = 480 v lc = 20 a vge=15v rg = 10o vcc = 480 v lc = 20 a rg=10} vge = 15v tj = 125 c min. typ. 20 70 350 300 max. unit ns ns a/(is hj
STGW20NB60H to-247 mechanical data dim. a d e f f3 f4 g h l l3 l4 l5 m mm min. 4.7 2.2 0.4 1 2 3 15.3 19.7 14.2 2 typ. 10.9 34.6 5.5 max. 5.3 2.6 0.8 1.4 2.4 3.4 15.9 20.3 14.8 3 inch min. 0.185 0.087 0.016 0.039 0.079 0.118 0.602 0.776 0.559 0.079 typ. 0.429 1.362 0.217 max. 0.209 0.102 0.031 0.055 0.094 0.134 0.626 0.779 0.582 0.118
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